High-Hall-Mobility Al-Doped ZnO Films Having Textured Polycrystalline Structure with a Well-Defined (0001) Orientation
نویسندگان
چکیده
Five hundred-nanometer-thick ZnO-based textured polycrystalline films consisting of 490-nm-thick Al-doped ZnO (AZO) films deposited on 10-nm-thick Ga-doped ZnO (GZO) films exhibited a high Hall mobility (μ H) of 50.1 cm(2)/Vs with a carrier concentration (N) of 2.55 × 10(20) cm(-3). Firstly, the GZO films were prepared on glass substrates by ion plating with dc arc discharge, and the AZO films were then deposited on the GZO films by direct current magnetron sputtering (DC-MS). The GZO interface layers with a preferential c-axis orientation play a critical role in producing AZO films with texture development of a well-defined (0001) orientation, whereas 500-nm-thick AZO films deposited by only DC-MS showed a mixture of the c-plane and the other plane orientation, to exhibit a μ H of 38.7 cm(2)/Vs with an N of 2.22 × 10(20) cm(-3).
منابع مشابه
Characteristics of Carrier Transport and Crystallographic Orientation Distribution of Transparent Conductive Al-Doped ZnO Polycrystalline Films Deposited by Radio-Frequency, Direct-Current, and Radio-Frequency-Superimposed Direct-Current Magnetron Sputtering
We investigated the characteristics of carrier transport and crystallographic orientation distribution in 500-nm-thick Al-doped ZnO (AZO) polycrystalline films to achieve high-Hall-mobility AZO films. The AZO films were deposited on glass substrates at 200 °C by direct-current, radio-frequency, or radio-frequency-superimposed direct-current magnetron sputtering at various power ratios. We used ...
متن کاملStructure and Electro-Optical Properties of Thin Films Grown by Alternate Atomic Layer Deposition of ZnO and Al_{2}O_{3} on the Sapphire Substrate
Al-doped ZnO thin films were prepared on the (0001) sapphire (c-Al2O3) substrates by atomic layer deposition (ALD) using alternating pulses of Zn(C2H5)2, Al(CH3)3 and H2O precursors and post-deposition high-temperature annealing. Photoluminescence (PL) spectroscopy showed that the threshold of stimulated emission decreases with increasing Al concentration, from 49.2 kW/cm of the ZnO film to 12....
متن کاملAn experimental and theoretical study on the physical properties of Al doped ZnO thin films
In this research, ZnO thin films with Al impurity as dopant were coated onto cleaned glass substrates by the spray pyrolysis technique. Crystal structure of the thin films was studied via XRD, and UV-vis spectroscopy was carried out to investigate their optical properties. Finally, in order to study the effect of Al impurity in ZnO thin films, the band structures of both pure and doped systems ...
متن کاملPreparation and proposed mechanism of ZnO Nanostructure Thin Film on Glass with Highest c-axis Orientation
In this paper, ZnO thin film is deposited on slide glass substrate using the sol-gel process. Presenting well-defined orientation of ZnO thin films Nanostructure were obtained by dip coating of zinc acetate dihydrate, monoethanolamine (MEA), de-ionized water and isopropanol alcohol. The annealed ZnO thin films were transparent ca 85-90% in visible range with an absorption edges at about 375 nm....
متن کاملDeposition of F-doped ZnO transparent thin films using ZnF2-doped ZnO target under different sputtering substrate temperatures
Highly transparent and conducting fluorine-doped ZnO (FZO) thin films were deposited onto glass substrates by radio-frequency (RF) magnetron sputtering, using 1.5 wt% zinc fluoride (ZnF2)-doped ZnO as sputtering target. Structural, electrical, and optical properties of the FZO thin films were investigated as a function of substrate temperature ranging from room temperature (RT) to 300°C. The cr...
متن کامل